Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1585
DESCRIPTION ·
·With TO-220Fa package
·V
≥60V;V
CEO
·Complement to type 2SB1094
APPLICATIONS
·For use in audio frequency power amplifier
and general purpose applications
PINNING
PIN DESCRIPTION
EBO
≥7V;I
C(DC)
≤3.0A
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 60 V
CBO
V
Collector -emitter voltage Open base 60 V
CEO
V
Emitter-base voltage Open collector 7 V
EBO
IC Collector current 3 A
ICM Collector current-Peak 5 A
IB Base current 0.6 A
PC Collector power dissipation
℃)
Ta=25℃ 2.0
W
TC=25℃ 15
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1585
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.1A; VCE=5V 16 MHz
COB Collector output capacitance f=1MHz ; VCB=10V 48 pF
h
Collector-emitter breakdown voltage IC=30mA; IB=0 60 V
Collector-emitter saturation voltage IC=2A; IB=0.2A 1.5 V
Base-emitter saturation voltage IC=2A ;IB=0.2A 2.0 V
Collector cut-off current VCB=60V; IE=0 10 μA
Emitter cut-off current VEB=7V; IC=0 10 μA
DC current gain IC=50mA ; VCE=5V 20
DC current gain IC=0.5A ; VCE=5V 40 200
Classifications
FE-2
M L K
40-80 60-120 100-200
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1585
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Loading...