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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1580
DESCRIPTION
·Low Collector Saturation Voltage
: V
·High Collector Power Dissipation
·Good Linearity of h
·Wide Area of Safe Operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1.0V(Max.)@ IC= 4A
CE(sat)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage 100 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
Collector Current-Pulse 10 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
1.5
W
40
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1580
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE
f
T
C
OB
sat
sat
Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 80 V
I
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.0 V
)
Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.5 V
)
Collector Cutoff Current VCB= 100V; IE= 0 10
Emitter Cutoff Current VEB= 4V; IC= 0 10
DC Current Gain IC= 1A; VCE= 5V 60 320
Current-Gain—Bandwidth Product IE= -0.5A; VCE= 5V 5 MHz
Output Capacitance
= 50μA; IE= 0
C
I
= 50μA; IC= 0
E
= 0; VCB= 10V; f
I
E
= 1.0MHz
test
100 V
5 V
150 pF
μA
μA
h
Classifications
FE
D E F
60-120 100-200 160-320
isc Website：www.iscsemi.cn
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