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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1576
DESCRIPTION
·High Collector-Base Breakdown Voltage : V
(BR)CBO
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1500V (Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
V
I
I
P
CBO
CES
CEO
EBO
I
C
CM
BM
C
Collector-Base Voltage 1500 V
Collector- Emitter Voltage 1500 V
Collector-Emitter Voltage 700 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 2 A
Collector Current-Peak 6 A
Base Current-Peak 2.5 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
@ TC=25℃
2.5
W
80
T
J
T
stg
Junction Temperature 150
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1576
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
V
(BR)EBO
I
CBO
h
FE
f
T
Switching times
t
stg
t
f
Collector-Emitter Saturation Voltage IC= 2A; IB= 1A B 5.0 V
Base-Emitter Saturation Voltage IC= 2A; IB= 1A B 1.5 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V
Collector Cutoff Current
DC Current Gain IC= 2A; VCE= 5V 2
Current-Gain—Bandwidth Product
Storage Time 9.0 μs
Fall Time
= 750V; IE= 0
V
CB
= 1500V; IE= 0
V
CB
I
= 0.5A; VCE= 10V; f
C
= 2.5A , IB= 1.1A; LB= 10μH
I
C
= 0.5MHz
test
2 MHz
1.0 μs
50
1.0
μA
mA
isc Website：www.iscsemi.cn
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