Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1565
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
·Complement type 2SB1087
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 10 A
IB Base current 0.5 A
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
℃)
TC=25℃ 30
PT Total power dissipation
T
=25℃ 1.5
a
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1565
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
ton Turn-on time 1.0
ts Storage time 3.5
Collector-emitter sustaining voltage IC=0.1A ; IB=0 100 V
Collector-emitter saturation voltage IC=2A; IB=2mA 1.5 V
Base-emitter saturation voltage IC=2A; IB=2mA 2.0 V
Collector cut-off current VCB=100V ;IE=0 1.0
Emitter cut-off current VEB=7V; IC=0 5.0 mA
DC current gain IC=2A ; VCE=2V 2000 20000
DC current gain IC=4A ; VCE=2V 500
I
=2A; IB1=-IB2=2mA
C
=25Ω; VCC≈50V
R
L
μA
μs
μs
tf Fall time
h
classifications
FE-1
M L K
2000-5000 4000-10000 8000-20000
2
1.2
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1565
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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