Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1563A
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SB1086A
·Wide area of safe operation
·High breakdown voltage :BV
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
=160V(min)
CEO
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
ICM Collector current-peak 3.0 A
PC Collector power dissipation
Collector-base voltage Open emitter 160 V
Collector-emitter voltage Open base 160 V
Emitter-base voltage Open collector 5 V
℃)
TC=25℃
=25℃
T
a
10
W
1.2
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1563A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=1mA ;IB=0 160 V
(BR)CEO
I
Emitter-base breakdown voltage
(BR)EBO
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=0.1A ; VCE=5V 56 270
fT Transition frequency IC=0.1A ; VCE=5V 80 MHz
Collector-base breakdown voltage
Collector-emitter saturation voltage IC=1.0A ;IB=0.1A 2.0 V
Base-emitter saturation voltage IC=1.0A ;IB=0.1A 1.5 V
Collector cut-off current VCB=120V; IE=0 1.0
Emitter cut-off current VEB=4V; IC=0 1.0
=50μA ;IC=0
E
I
=50μA ;IE=0
C
5 V
160 V
μA
μA
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 20 pF
hFE Classifications
N P Q
56-120 82-180 120-270
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1563A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...