Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1544
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
B
C
T
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 3.5 A
B Base Current- Continuous 1 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
40 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1544
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
C
OB
t
f
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 8.0 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 1.5 V
Collector Cutoff Current VCB= 500V; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 0.5A; VCE= 5V 8
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 3 MHz
Output Capacitance
Fall Time
I
= 0; VCB= 10V; f
E
I
= 3A, I
CP
B1(
end
test
= 0.8A
)
= 1.0MHz
95 pF
0.5 1.0 μs
isc Website：www.iscsemi.cn
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