Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1531
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Good Linearity of h
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= 40V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 50 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 2 A
Collector Current-Peak 4 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
5
W
1.2
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1531
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
CE(
V
BE(
I
CBO
I
CEO
I
EBO
h
FE
f
T
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 50 V
Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 B 40 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V
)
sat
Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.5 V
)
sat
Collector Cutoff Current VCB= 50V; IE= 0 1.0
Collector Cutoff Current VCE= 10V; IB= 0 B 100
Emitter Cutoff Current VEB= 5V; IC= 0 10
DC Current Gain IC= 1A; VCE= 5V 50 220
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 150 MHz
μA
μA
μA
C
OB
Collector Output Capacitance IE= 0; VCB= 20V; f= 1MHz 20 pF
h
Classifications
FE
P Q R
50-100 80-160 120-220
isc Website：www.iscsemi.cn
2
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