Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1518
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 900 V
Collector-Emitter Voltage 400 V
Emitter-Base voltage 7 V
Collector Current-Continuous 6 A
Collector Current-Pulse 10 A
B Base Current-Continuous 3 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
50 W
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1518
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
t
f
Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 5.0 V
Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V
Collector Cutoff Current VCB= 900V; IE= 0 1.0 mA
Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA
DC Current Gain IC= 10mA ; VCE= 5V 8
DC Current Gain IC= 0.6A; VCE= 5V 10 40
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 5 MHz
Output Capacitance
Fall Time IC= 2.5A; IB1= 0.5A; IB2= -1A 0.5
= 0; VCB= 10V; f
I
E
= 1.0MHz
test
75 pF
μs
isc Website：www.iscsemi.cn
2
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