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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1517
DESCRIPTION
·Low Collector Saturation Voltage
: V
·Collector-Emitter Breakdown Voltage-
: V
·Good Linearity of h
·High Speed Switching
APPLICATIONS
·Designed for power amplifier,power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 0.5V(Max)@ IC= 2A
CE(sat)
= 80V (Min)
(BR)CEO
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage 130 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 2 A
Collector Current-Peak 5 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
@ T
=25℃
a
Junction Temperature 150
25
W
2
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1517
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
sat
V
BE(
sat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
t
stg
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A B 0.5 V
)
Base-Emitter Saturation Voltage IC= 2A; IB= 0.1A B 1.5 V
)
Collector Cutoff Current VCB= 100V; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 50 μA
DC Current Gain IC= 0.1A; VCE= 2V 45
DC Current Gain IC= 0.5A; VCE= 2V 60 260
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 10MHz 25 MHz
Turn-on Time 0.1 μs
Storage Time 2.5 μs
= 0.5A; IB1= -IB2= 50mA;
I
C
VCC= 50V
t
f
Fall Time
0.3 μs
h
classifications
FE-2
R Q P
60-120 90-180 130-260
isc Website：www.iscsemi.cn
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