Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1506
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SB1065
·Low collector saturation voltage
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-peak 4.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 50 V
Emitter-base voltage Open collector 5 V
℃)
TC=25℃
=25℃
T
a
10
W
1.2
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1506
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=1mA ,IB=0 50 V
(BR)CEO
Collector-base breakdown voltage IC=50μA ,IE=0 60 V
(BR)CBO
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Emitter-base breakdown voltage IE=50μA ,IC=0 5 V
Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V
Base-emitter saturation voltage IC=2A; IB=0.2A 1.5 V
Collector cut-off current VCB=40V; IE=0 1.0 μA
Emitter cut-off current VEB=4V; IC=0 1.0 μA
hFE DC current gai n IC=0.5A ; VCE=3V 56 390
COB Output capacitance IE=0 ; VCB=10V,f=1MHz 40 pF
fT Transition frequency IC=0.5A ; VCE=5V 90 MHz
hFE Classifications
N P Q R
56-120 82-180 120-270 180-390
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1506
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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