Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1500
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High DC Current Gain
: h
FE
·Low Saturation Voltage
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 100V(Min)
(BR)CEO
= 1000(Min) @IC= 10A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
B
C
T
J
Collector-Base Voltage 150 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 10 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
40 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1500
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE
V
ECF
C
OB
f
T
Switching times
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 100 V
Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V
)
sat
Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V
)
sat
Collector Cutoff Current VCB= 150V; IE= 0 10
Emitter Cutoff Current VEB= 8V; IC= 0 16 mA
DC Current Gain IC= 10A; VCE= 2V 1000
C-E Diode Forward Voltage IF= 10A 3.0 V
Output Capacitance
Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 20 MHz
= 0; VCB= 50V, f
I
E
= 1MHz
test
μA
75 pF
t
on
t
stg
t
f
Turn-on Time 0.6
I
= -IB2= 25mA;
Storage Time 3.0
Fall Time
B1
= 5Ω; VCC= 50V
R
L
1.0
μs
μs
μs
isc Website：www.iscsemi.cn
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