Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1497
DESCRIPTION
·With TO-3PN package
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·High voltage power switching TV horizontal
deflection output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 7 A
I
C(
surge
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 7 V
Collector surge current 16 A
)
℃)
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -45~150
stg
=25℃
C
50 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1497
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CEX
I
EBO
h
FE-1
h
FE-2
Emitter-base breakdown voltage IE=10mA; IC=0 7 V
Collector-emitter breakdown voltage IC=10mA; RBE=∞ 600 V
Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V
Base-emitter saturation voltage IC=5A; IB=1A 1.5 V
Collector cut-off current VCE=1500V; VBE=1.5V 1.0 mA
Emitter cut-off current VEB=7V; IC=0 1.0 mA
DC current gain IC=0.3A ; VCE=5V 10 30
DC current gain IC=5A ; VCE=5V 5
tf Fall time ICP=4A;IB1=1.3A; LB=0 2.0 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1497
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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