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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1495
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
APPLICATIONS
·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 4 A
Collector Power Dissipation
@ TC= 25℃
Junction Temperature 150
Storage Temperature Range -45~150
50 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1495
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
hFE DC Current Gain IC= 1A; VCE= 5V 6
Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 600 V
Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A 5.0 V
Base-Emitter Saturation Voltage IC= 3.5A; IB= 1A 1.5 V
Collector Cutoff Current VCB= 600V; IE= 0 10 μA
isc Website：www.iscsemi.cn
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