Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1492
DESCRIPTION
·With TO-3PN package
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·High voltage power switching TV horizontal
deflection output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
50 W
℃
T
Storage temperature -45~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1492
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CEX
I
EBO
h
FE
Emitter-base breakdown voltage IE=10mA; IC=0 6 V
Collector-emitter breakdown voltage IC=10mA; RBE=∞ 600 V
Collector-emitter saturation voltage IC=1.2A; IB=0.3A 5.0 V
Base-emitter saturation voltage IC=1.2A; IB=0.3A 1.5 V
Collector cut-off current VCE=1500V; VBE=1.5V 1.0 mA
Emitter cut-off current VEB=6V; IC=0 1.0 mA
DC current gain IC=0.3A ; VCE=5V 10 30
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1492
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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