Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1479
DESCRIPTION
·With TO-3PN package
·High voltage ,high reliability
·High speed switching
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 2.5 A
ICM Collector current (Pulse) 6 A
IBM Base current (Pulse) 2.5 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 5 V
℃)
PC Collector power dissipation TC=25℃ 80 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1479
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
ts Storage time 9.0 μs
tf Fall time
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=2A; IB=1A 5.0 V
Base-emitter saturation voltage IC=2A; IB=1A 1.5 V
VCB=750V; IE=0 50 μA
Collector cut-off current
=1500V; IE=0
V
CB
Emitter cut-off current VEB=5V; IC=0 50 μA
DC current gain IC=2A ; VCE=5V 2 5
I
=2.5A
C
I
=1.1A,LB=10μH
Bend
1.0 mA
1.0 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1479
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
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