Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1476
DESCRIPTION
·Low Collector Saturation Voltage
: V
·Collector-Emitter Breakdown Voltage-
: V
·Good Linearity of h
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1.0V(Max)@ IC= 2A
CE(sat)
= 60V (Min)
(BR)CEO
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
B
C
T
J
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 4 A
B Base Current-Peak 1 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
@ T
=25℃
a
Junction Temperature 150 ℃
35
W
1.4
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1476
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
sat
V
BE(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
t
stg
Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 60 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V
)
Base-Emitter On Voltage IC= 1A; VCE= 4V 1.2 V
Collector Cutoff Current VCB= 80V; IE= 0 100 μA
Emitter Cutoff Current VEB= 6V; IC= 0 100 μA
DC Current Gain IC= 1A; VCE= 4V 40 320
DC Current Gain IC= 3A; VCE= 4V 20
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 12V 50 MHz
Turn-on Time 0.35 μs
Storage Time 1.0 μs
I
= 4A; IB1= -IB2= 0.4A
C
t
f
Fall Time
0.3 μs
h
classifications
FE-1
R Q P O
40-90 70-150 120-250 160-320
isc Website：www.iscsemi.cn
2
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