Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1453
DESCRIPTION
·With TO-3PN package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
EBO
IC Collector current (DC) 3 A
ICM Collector current-Peak 3.5 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 1500 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
50 W
℃
T
Storage temperature -45~150
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1453
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CES
h
FE
VF Diode forward voltage IF=3A 2.2 V
tf Fall time
Emitter-base breakdown voltage IE=200mA; IC=0 6 V
Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V
Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V
V
Collector cut-off current
DC current gain IC=0.3A ; VCE=5V 6
=1500V; RBE=∞
CE
I
=2.75A; IB1=0.6A; IB2≈-1.3A
CP
0.5 mA
0.8
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1453
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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