Page 1
Transistor
V
B
IB=1mA
R
on
= ✕1000(Ω)
f=1kHz
V=0.3V
1kΩ
V
A
V
V
VA–V
B
V
B
2SD1450
Silicon NPN epitaxial planer type
For low-frequency amplification
Features
■
●
Optimum for high-density mounting.
●
Allowing supply with the radial taping.
●
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (Ta=25˚C)
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
*1
h
Rank classification
FE1
Rank R S T
h
FE1
200 ~ 350 300 ~ 500 400 ~ 800
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
*1
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
*3
R
on
.
CE(sat)
Ratings
25
20
12
1
0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
Conditions
VCB = 25V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A
*2
IC = 500mA, IB = 20mA
IC = 500mA, IB = 20mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
*2
*2
*2
*3
Ron Measurement circuit
marking
min
25
20
12
200
60
4.0±0.2
123
1.271.27
2.54±0.15
typ
0.13
200
10
0.6
Unit: mm
3.0±0.215.6±0.5
0.1
+0.2
–
0.7±0.1
2.0±0.2
0.45
max
100
Unit
nA
800
0.4
1.2
MHz
pF
*2
Pulse measurement
V
V
V
V
V
Ω
1
Page 2
Transistor
2SD1450
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
25˚C
Ta=75˚C
–25˚C
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
)
C
IC/IB=25
)
CE
2.4
2.0
)
A
(
1.6
C
1.2
0.8
Collector current I
0.4
0
012108264
IB=4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
Collector to emitter voltage VCE (V
hFE — I
C
1200
FE
1000
800
Ta=75˚C
600
400
200
Forward current transfer ratio h
25˚C
–25˚C
0
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
Ta=25˚C
VCE=2V
)
V
BE(sat)
100
)
V
(
30
BE(sat)
10
3
Ta=–25˚C
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
)
25˚C
Collector current IC (A
fT — I
400
350
)
MHz
300
(
T
250
200
150
100
Transition frequency f
50
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Emitter current IE (mA
— I
75˚C
C
IC/IB=10
)
E
VCB=10V
Ta=25˚C
)
Cob — V
20
)
pF
(
16
ob
12
8
4
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
mV
(
Noise voltage NV
)
NV — I
C
120
100
80
60
40
20
0
0.01 0.03 0.1 0.3 1
VCE=10V
G
=80dB
V
Function=FLAT
Rg=100kΩ
22kΩ
5kΩ
Collector current IC (mA
)
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