Datasheet 2SD1446 Datasheet (Panasonic)

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1446

Silicon NPN triple diffusion planar type Darlington

For power amplification

Features

■

●

High foward current transfer ratio h

●

High collector to base voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

*

V

CEO(sus)

50/60Hz

mercury relay

120Ω

6V

T est circuit

1Ω

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

15V

CBO

CBO

CEO

EBO

Symbol

I

CBO

V

CEO(sus)

V

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

L 10mH

FE

=25˚C)

C

Ratings

–55 to +150

=25˚C)

C

*

X

Y

G

500
400

5

10

6

40

2

150

VCB = 350V, IE = 0
IC = 2A, L = 10mH
IE = 0.1A, IC = 0
VCE = 2V, IC = 2A
IC = 3A, IB = 0.06A
IC = 3A, IB = 0.06A
VCE = 10V, IC = 1A, f = 1MHz

Unit

V
V
V
A
A

W

˚C
˚C

Conditions

TO–220 Full Pack Package(a)

Internal Connection

B

min

400

5

500

typ15max

100

1.5

2.5

Unit: mm

1:Base
2:Collector
3:Emitter

C

E

Unit

µA

V
V

V
V

MHz

1

Po wer Transistors 2SD1446, 2SD1446A

PC—Ta IC—V

80

)

70

W

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=2.0W)

(P

C

(1)

(2)

(3)

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=50

TC=–25˚C

100˚C

25˚C

Collector current IC (A

)

CE

5

4

)

A

(

C

3

2

Collector current I

1

0

0654132

)

Collector to emitter voltage VCE (V

IB=8mA

hFE—I

100000

30000

FE

10000

3000

1000

300

TC=100˚C

100

25˚C

Forward current transfer ratio h

30

–25˚C

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

4.0mA

3.5mA

3.0mA

2.5mA

2.0mA

C

TC=25˚C

1.5mA

VCE=2V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10

)
pF

(

ob

10

10

10

Collector output capacitance C

V

CE(sat)—IC

IC/IB=50

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Cob—V

4

3

2

1

0.1 1 10 1000.3 3 30

TC=100˚C

CB

25˚C

–25˚C

IE=0
f=1MHz
T

=25˚C

C

)

Collector to base voltage VCB (V

)

Area of safe operation (ASO) R

100

30

I

)

CP

10

A

(

I

C

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

1ms

DC

Collector to emitter voltage VCE (V

t=10µs

)

2

10

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

)

˚C/W

(

10

(t)

th

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10