Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1440
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
I
P
CBO
CES
EBO
I
C
CP
BP
C
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 1500 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 3.5 A
Collector Current-Peak 13 A
Base Current-Peak 3.5 A
Collector Power Dissipation
@ Ta= 25℃
Collector Power Dissipation
@ TC= 25℃
2.5
W
65
T
J
T
stg
Junction Temperature 130 ℃
Storage Temperature Range -55~130 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1440
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE
V
BE
I
CBO
h
V
(sat)
FE
f
T
ECF
t
s
t
f
(sat)
Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V
Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V
= 750V; IE= 0
V
Collector Cutoff Current
DC Current Gain IC= 2.5A; VCE= 10V 4 15
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 2 MHz
C-E Diode Forward Voltage IF= 4A 2.2 V
Storage Time 9.0 μs
Fall Time
CB
= 1500V; IE= 0
V
CB
I
= 2.5A, I
C
B
end
= 0.8A, L
leak
= 5μH
0.8 μs
50
1.0
μA
mA
isc Website：www.iscsemi.cn
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