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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1439
DESCRIPTION
·High Voltage
·High Switching Speed
·Built-in damper diode
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in horizontal deflection circuits of
colour TV receivers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
V
CBO
V
CES
V
EBO
IC Collector Current-Continuous 3 A
ICP Collector Current-Peak 10 A
IBP Base Current- Peak 3.5 A
PC
Tj Junction Temperature 150 ℃
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 1500 V
Emitter-Base Voltage 5 V
Collector Power Dissipation
@TC=25℃
Collector Power Dissipation
@Ta=25℃
PARAMETER VALUE UNIT
50
2.5
W
T
stg
Storage Temperature Range -65-150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1439
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
(BR)EBO
V
CE(
sat
V
BE(
sat
Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.75A 5.0 V
)
Base-Emitter Saturation Voltage IC= 2A; IB= 0.75A 1.5 V
)
PARAMETER CONDITIONS MIN TYP MAX UNIT
hFE DC Current Gain IC= 2A ; VCE= 10V 4 12
VCB= 750V; IE= 0 50 μA
I
Collector Cutoff Current
CBO
VCB= 1500V; IE= 0
V
C-E Diode Forward Voltage IF= 2A 2.2 V
ECF
1.0 mA
fT Transition Frequency IC= 0.5A ; VCE= 10V 2 MHz
Switching Times
ts
tf
Storage Time 7 μs
IC= 2A; IB= 0.75A; L
Fall Time
leak
= 5μH
0.75 μs
isc Website：www.iscsemi.cn
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