Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1436
DESCRIPTION
·High DC Current Gain
: h
·Collector-Emitter Breakdown Voltage : V
·Complement to Type 2SB1032
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1000(Min.)@ IC= 5A, VCE= 3V
FE
(BR)CEO
= 120V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
T
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 10 A
Collector Current-Peak 15 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
80 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1436
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= 25mA, RBE= ∞
C
120 V
V
(BR)EBO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
CEO
h
FE
Switching Times
t
on
t
off
Emitter-Base Breakdown Voltage IE= 200mA ,IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A, IB= 10mA B 1.5 V
Collector-Emitter Saturation Voltage IC= 10A, IB= 0.1A 3.0 V
Base-Emitter Saturation Voltage IC= 5A, IB= 10mA B 2.0 V
Base-Emitter Saturation Voltage IC= 10A, IB= 0.1A 3.5 V
Collector Cutoff current VCB= 120V, IE= 0 0.1 mA
Collector Cutoff current
DC Current Gain IC= 5A; VCE= 3V 1000 20000
Turn-On Time 0.8
Turn-Off T ime
V
= 100V, RBE= ∞
CE
I
= 5A, IB1 = -IB2= 10mA
C
10
4.0
μA
μs
μs
isc Website：www.iscsemi.cn
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