Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1430
DESCRIPTION
·With TO-3P(H)IS package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in color TV horizontal
output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3.5 A
IE Emitter current -3.5 A
PD Total power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
=25℃)
a
T
=25℃
C
80 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1430
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=3A; IB=0.8A 4.0 8.0 V
CE(sat)
V
Base-emitter saturation voltage IC=3A; IB=0.8A 1.5 V
BE(sat)
I
Collector cut-off current VCB=500V; IE=0 10 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 1 mA
EBO
h
DC current gain IC=0.5A ; VCE=5V 8 20
FE
fT Transition freuqency IC=0.1A ; VCE=10V 3 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 95 pF
tf Fall time IC=3A;IB1=0.8A 1.0 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1430
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Loading...