Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1428
DESCRIPTION
·With TO-3P(H)1S package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in color TV horizontal
output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
IE Emitter current -6 A
PD Total power dissipation TC=25℃ 80 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1428
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE(sat)
V
BE(sat)
I
CBO
h
FE
Emitter-base breakdown voltage IE=200mA; IC=0 5 V
Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V
Base-emitter saturation voltage IC=5A; IB=1A 1.5 V
Collector cut-off current VCB=500V; IE=0 10 μA
DC current gain IC=1A ; VCE=5V 8
fT Transition freuqency IC=0.1A ; VCE=10V;f=1MHz 3 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF
VF Diode forward voltage IF=6A 2.0 V
tf Fall time IC=5A;IB1=1A 1.0 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1428
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.15 mm)
3
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