Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1425
DESCRIPTION
·With TO-3P(H)1S package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in color TV deflection
circuits
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2.5 A
IB Base current 1.0 A
PD Total power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
=25℃)
a
T
=25℃
C
80 W
℃
T
Storage temperature -55~150
stg
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 1.56 ℃/W
th j-C
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1425
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE(sat)
V
BE(sat)
I
CBO
h
FE
Emitter-base breakdown voltage IE=200mA; IC=0 5 V
Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V
Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V
Collector cut-off current VCB=500V; IE=0 10 μA
DC current gain IC=0.5A ; VCE=5V 8
fT Transition freuqency IC=0.1A ; VCE=10V;f=1MHz 3 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 95 pF
VF Diode forward voltage IF=2.5A 2.0 V
tf Fall time IC=2A;IB1=0.6A 1.0 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1425
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.15 mm)
3
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