Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1417
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1022
·DARLINGTON
APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 60 V
CBO
V
Collector -emitter voltage Open base 60 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 7 A
IB Base current 0.2 A
PC Collector power dissipation
℃)
TC=25℃
Ta=25℃
30
W
2.0
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1417
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=50mA; IB=0 60 V
Collector-emitter saturation voltage IC=3A ;IB=6mA 0.9 1.5 V
Collector-emitter saturation voltage IC=7A ;IB=14mA 1.2 2.0 V
Base-emitter saturation voltage IC=3A ;IB=6mA 1.5 2.5 V
Collector cut-off current VCB=60V; IE=0 100
μA
Emitter cut-off current VEB=5V; IC=0 3.0 mA
DC current gain IC=3A ; VCE=3V 2000 15000
DC current gain IC=7A ; VCE=3V 1000
Switching times
ton Turn-on time 0.8
μs
t
stg
Storage time 3.0
tf Fall time
I
=-IB2=6mA
B1
≈45V ,RL=15Ω
V
CC
2.5
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1417
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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