Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1416
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Collector-Emitter Saturation Voltage : V
CE(sat)
·High DC Current Gain
: h
= 2000(Min) @ IC= 3A, VCE= 3V
FE
·Complement to Type 2SB1021
APPLICATIONS
·Hammer driver,pulse motor drive applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 80V(Min)
= 1.5V(Max) @IC= 3A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
B Base Current-Continuous 0.2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
30 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1416
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
sat
V
CE(
sat
V
BE(
I
CBO
I
EBO
h
FE -1
h
FE -2
Switching times
t
on
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 1.5 V
)-1
Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA B 2.0 V
)-2
Base-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.5 V
)
sat
Collector Cutoff Current VCB= 80V; IE= 0 100 μA
Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA
DC Current Gain IC= 3A; VCE= 3V 2000 15000
DC Current Gain IC= 7A; VCE= 3V 1000
Turn-on Time 0.8 μs
= -IB2= 6mA
I
B1
= 15Ω; VCC= 45V
t
stg
t
f
Storage Time 3.0 μs
Fall Time
R
L
P
=20μs; Duty Cycle≤1%
W
2.5 μs
isc Website：www.iscsemi.cn
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