Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1415A
DESCRIPTION
·With TO-220F package
·High DC current gain
·Low saturation voltage
·DARLINGTON
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 120 V
CBO
V
Collector -emitter voltage Open base 100 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
IC Collector current 7 A
ICP Collector current peak 10 A
IB Base current 0.7 A
PC Collector power dissipation
℃)
TC=25℃
=25℃
T
a
25
W
2.0
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1415A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=50mA; IB=0 100 V
Collector-emitter saturation voltage IC=3A ;IB=6mA 0.9 1.5 V
Base-emitter saturation voltage IC=3A ;IB=6mA 1.5 2.0 V
Collector cut-off current VCB=100V; IE=0 100
μA
Emitter cut-off current VEB=6V; IC=0 3.0 mA
DC current gain IC=3A ; VCE=3V 2000 15000
DC current gain IC=6A ; VCE=3V 1000
Switching times
ton Turn-on time 0.3
I
=-IB2=6mA
t
stg
Storage time 5.1
B1
≈45V ,RL=15Ω
V
CC
μs
μs
tf Fall time
2
0.6
μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1415A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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