Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1414
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1024
·DARLINGTON
APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 100 V
CBO
V
Collector -emitter voltage Open base 80 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 4 A
IB Base current 0.5 A
℃)
PC Collector power dissipation TC=25℃ 20 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1414
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=10mA; IB=0 80 V
Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V
Base-emitter saturation voltage IC=3A ;IB=6mA 2.0 V
Collector cut-off current VCB=100V; IE=0 20
μA
Emitter cut-off current VEB=5V; IC=0 2.5 mA
DC current gain IC=1A ; VCE=2V 2000
DC current gain IC=3A ; VCE=2V 1000
Switching times
ton Turn-on time 0.2
I
=-IB2=6mA
t
stg
Storage time 1.5
B1
VCC=30V ,RL=10Ω
μs
μs
tf Fall time
2
0.6
μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1414
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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