Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1412
DESCRIPTION
·Low Collector Saturation Voltage
: V
·Collector-Emitter Breakdown Voltage-
: V
·Complement to Type 2SB1019
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 0.4V(Max)@ IC= 4A
CE(sat)
= 50V (Min)
(BR)CEO
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 70 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
2
W
30
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1412
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
sat
V
BE(
sat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Switching Times
Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 50 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 0.4 V
)
Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.2 V
)
Collector Cutoff Current VCB= 70V; IE= 0 30
Emitter Cutoff Current VEB= 5V; IC= 0 50
DC Current Gain IC= 1A; VCE= 1V 70 240
DC Current Gain IC= 4A; VCE= 1V 30
Output Capacitance
Current-Gain—Bandwidth Product IC= 1A; VCE= 4V 10 MHz
= 0; VCB= 10V, f
I
E
= 1MHz
test
μA
μA
250 pF
t
on
t
stg
t
f
Turn-on Time 0.2
I
= -IB2= 0.3A;
Storage Time 2.5
Fall Time
B1
R
= 10Ω; VCC= 30V
L
0.5
h
classifications
FE
O Y
70-140 120-240
isc Website：www.iscsemi.cn
2
μs
μs
μs
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