Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1400
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current- Continuous 2.5 A
Collector Current-Pulse 10 A
Collector Power Dissipation
= 25℃
@ T
C
Junction Temperature 150 ℃
80 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1400
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V
Collector-Emitter Breakdown Voltage IC= 100mA; RBE= ∞ 800 V
Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 8.0 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V
Collector Cutoff Current VCB= 800V; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 0.5A; VCE= 5V 8
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz
t
f
Fall Time
IC= 2A, I
= 100Ω; VCC= 200V
R
L
= 0.6A, I
B
1
= -1.2A;
B
2
0.7 μs
isc Website：www.iscsemi.cn
2
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