Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1396
DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High voltage ,high reliability
·High speed switching
APPLICATIONS
·For horizontal output applications
PINNING
PIN DESCRIPTION
1
2
3
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Emitter
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 2.5 A
ICM Collector current-peak 10 A
PC Collector power dissipation TC=25℃ 80 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1396
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector- emitter breakdown voltage IC=100mA; RBE=∞ 800 V
Collector-base breakdown voltage IC=5mA; IE=0 1500 V
Emitter-base breakdown voltage IE=200mA; IC=0 7 V
Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V
Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V
Collector cut-off current VCB=800V; IE=0 10 μA
Emitter cut-off current VEB=4V; IC=0 40 130 mA
DC current gain IC=0.5A ; VCE=5V 8
fT Transition frequency IC=0.5A ; VCE=10V 3 MHz
I
=2A;IB1=0.6A; IB2=-1.2A,
tf Fall time
C
=200V; RL=100Ω
V
CC
0.7 μs
VF Diode forward voltage IEC=2.5A 2.0 V
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1396
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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