Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1391
DESCRIPTION
·With TO-3PN package
·High speed switching
·High voltage,high reliability
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 5 A
ICM Collector current (Pulse) 17 A
PC Collector power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 6 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1391
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE
tf Fall time 1.0
Collector-emitter sustaining voltage IC=100mA; IB=0 700 V
Emitter-base breakdown voltage IE=1mA; IC=0 6 V
Collector-emitter saturation voltage IC=4.5A; IB=2A 2.0 V
Base-emitter saturation voltage IC=4.5A; IB=2A 1.3 V
μA
Collector cut-off current
VCB=750V; IE=0 50
=1500V; IE=0
V
CB
1.0 mA
DC current gain IC=3A ; VCE=10V 4 15
μs
IC=4A
=1.5A,LB=10μH
I
B
ts Storage time
end
11
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1391
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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