Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1390
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Reliability
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CES
EBO
I
C
CP
C
T
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 1500 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 1 A
Collector Current-Pulse 2.5 A
Collector Power Dissipation
≤90℃
@ T
C
Junction Temperature 150
40 W
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1390
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE
V
BE
I
CBO
h
FE
t
t
stg
(sat)
(sat)
f
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 1A B 5.0 V
Base-Emitter Saturation Voltage IC= 2A; IB= 1A B 1.5 V
VCB= 750V; IE= 0 50 μA
Collector Cutoff Current
= 1500V; IE= 0
V
CB
DC Current Gain IC= 2A; VCE= 5V 2 7
Fall Time 1 μs
I
Storage Time
= 2.5A, I
C
= 1.1A, LB= 10μH B
B
end
1 mA
11 μs
isc Website：www.iscsemi.cn
2
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