Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1380
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SB1009
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 40 V
Collector-emitter voltage Open base 32 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
10 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1380
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=1mA ;IB=0 32 V
Collector-base breakdown voltage IC=50μA ;IE=0 40 V
Emitter-base breakdown voltage IE=50μA ;IC=0 5 V
Collector-emitter saturation voltage IC=2.0A; IB=0.2A 0.5 0.8 V
Collector cut-off current VCB=20V; IE=0 1 μA
Emitter cut-off current VEB=4V; IC=0 1 μA
DC current gain IC=0.5A ; VCE=3V 82 390
fT Transition frequency IE=-0.5A ; VCE=5V 100 MHz
COB Collector output capacitance IE=0; f=1MHz ; VCB=10V 30 pF
hFE Classifications
P Q R
82-180 120-270 180-390
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1380
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...