Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1378
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Low Saturation Voltage : V
·Complement to Type 2SB1007
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 80V(Min)
(BR)CEO
= 0.4V(Max)@ I
CE(sat)
= 0.5A
C
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 0.7 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
1.2
W
10
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1378
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(
I
I
h
C
h
Collector-Base Breakdown Voltage IC= 50μA; IE= 0 80 V
Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 B 80 V
Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.4 V
)
sat
CBO
EBO
FE
f
T
OB
FE
Collector Cutoff Current VCB= 50V; IE= 0 0.5 μA
Emitter Cutoff Current VEB= 4V; IC= 0 0.5 μA
DC Current Gain IC= 0.1A; VCE= 3V 82 390
Current-Gain—Bandwidth Product IE= 50mA; VCE= 10V 120 MHz
Output Capacitance
Classifications
I
= 0; VCB= 10V, f
E
= 1MHz
test
10 pF
P Q R
82-180 120-270 180-390
isc Website：www.iscsemi.cn
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