Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1375
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Designed for line operated audio output
amplifier ,and switching power supply
drivers applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
T
=75℃
C
90 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1375
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=30mA ;IB=0 300 V
Collector-base breakdown voltage IC=1mA ;IE=0 300 V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V
Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V
Collector cut-off current VCB=300V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
hFE DC current gai n IC=1A ; VCE=5V 30
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1375
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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