Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1352
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Good Linearity of h
·Complement to Type 2SB989
APPLICATIONS
·Designed for general purpose application
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 80(Min)
FE
=25℃)
a
V
V
V
P
T
CBO
CEO
EBO
I
C
I
E
I
B
T
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 4 A
Emitter Current-Continuous -4 A
B Base Current-Continuous 0.4 A
Collector Power Dissipation@ TC=25℃
C
Junction Temperature 150
J
Storage Temperature Range -55~150
30 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1352
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
h
C
FE-1
FE-2
OB
f
T
(sat)
(on)
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V
Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 0.45 1.5 V
Base-Emitter On Voltage IC= 3A ; VCE= 5V 1.0 1.5 V
Collector Cutoff Current VCB= 80V; IE= 0 30
μA
Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA
DC Current Gain IC= 0.5A ; VCE= 5V 40 240
DC Current Gain IC= 3A ; VCE= 5V 15 50
Output Capacitance
= 0; VCB= 10V; f
I
E
= 1MHz
test
90 pF
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V 3 8 MHz
h
Classifications
FE-1
R O Y
40-80 70-140 120-240
isc Website：www.iscsemi.cn
2
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