Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1351
DESCRIPTION ·
·With
·Complement to type 2SB988
·Low collector saturation voltage
APPLICATIONS
·For general purpose application
PINNING
TO-220C package
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
IB Base current 0.5 A
PC Collector dissipation
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃ 2
T
=25℃ 30
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -50~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1351
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=50mA; IB=0 60 V
Collector-emitter saturation voltage IC=2A; IB=0.2A 0.25 1.0 V
Base-emitter on voltage IC=0.5A ; VCE=5V 0.7 1.0 V
Collector cut-off current VCB=60V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
DC current gain IC=0.5A ; VCE=5V 60 300
Cob Output capacitance IE=0; VCB=10V,f=1MHz 35 pF
fT Transition frequency IC=0.5A ; VCE=5V 3.0 MHz
Switching times
ton Turn-on time 0.65
μs
IB1=-IB2=0.2A
=30V;RL=15Ω
t
Storage time 1.30
stg
V
CC
μs
Duty cycle≤1%
tf Fall time
h
Classifications
FE
O Y GR
60-120 100-200 150-300
2
0.65
μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1351
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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