Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1345
DESCRIPTION
·High Switching Time
·Low Collector Saturation Voltage
: V
CE(sat)
·Wide Area of Safe Operation
·Complement to Type 2SB983
APPLICATIONS
·Inverters, converters
·Controllers for DC motor, pulse motor
·Switching power supplies
·General power applications
ABSOLUTE MAXIMUM RATINGS(T
= 0.4V(Max)@IC= 4A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
BM
T
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 7 A
Collector Current-Peak 12 A
B Base Current-Continuous 1.5 A
Base Current-Peak 4 A
Total Power Dissipation
C
@ TC=25℃
Junction Temperature 150
J
Storage Temperature Range -55~150
40 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 3.1 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1345
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 50 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 0.4 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.2 V
Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA
Collector Cutoff Current VCE= 40V; IB= 0 B 0.1 mA
Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA
DC Current Gain IC= 1A; VCE= 2V 70 200
DC Current Gain IC= 5A; VCE= 2V 30
Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 10 MHz
t
on
t
stg
t
f
Turn-on Time 0.2
= 10Ω, V
R
Storage Time 0.9
Fall Time
L
= 2A; IB1= -IB2= 0.2A
I
C
BB2
= -5V
0.3
μs
μs
μs
isc Website：www.iscsemi.cn
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