Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1344
DESCRIPTION
·With TO-3 package
·High voltage
·Built-in damper diode
APPLICATIONS
·For color TV horizontal deflection
output applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
PT Total power dissipation TC=25℃ 50 W
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
Tj Junction temperature 150 ℃
T
Storage temperature -40~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1344
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=100m A;IB=0 600 V
Emitter-base breakdown voltage IE=200m A;IC=0 5 V
Collector-emitter saturation voltage IC=4A;IB=0.8 A 5.0 V
Base-emitter saturation voltage IC=4A;IB=0.8 A 1.5 V
Collector cut-off current VCB=800V;IE=0 10
μA
DC current gain IC=0.5A ; VCE=5V 10
DC current gain IC=3A ; VCE=5V 5
VF Diode forward voltage IF=4A 2.0 V
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1344
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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