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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1336
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High DC Current Gain
: h
FE
·High Speed Switching
APPLICATIONS
·High power switching applications
ABSOLUTE MAXIMUM RATINGS(T
= 100V(Min)
(BR)CEO
= 1500(Min) @ IC= 5A, VCE= 4V
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage 150 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 6 A
Collector Current-Peak 10 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150
2
W
35
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1336
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CE(
sat
V
BE(
I
CBO
h
FE
f
T
Switching times
t
on
t
stg
Collector-Emitter Sustaining Voltage IC= 2A; L= 10mH 100 V
Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 8 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 12.5mA B 1.5 V
)
Base-Emitter Saturation Voltage IC= 5A; IB= 12.5mA B 2.5 V
)
sat
Collector Cutoff Current VCB= 150V; IE= 0 100 μA
DC Current Gain IC= 5A; VCE= 4V 1500
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz 20 MHz
Turn-on Time 0.7 μs
Storage Time 4.0 μs
IC= 5A, IB1= -IB2= 12.5mA;
V
= 50V
CC
t
f
Fall Time
1.5 μs
isc Website：www.iscsemi.cn
2
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