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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1311
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Low Collector Saturation Voltage : V
CE(sat)
APPLICATIONS
·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 100V(Min)
= 1.5V(Max.)@IC= 3A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
T
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 7.0 V
Collector Current-Continuous 4 A
Collector Current-Peak 6 A
B Base Current-Continuous 0.6 A
Collector Power Dissipation
@ Ta=25℃
C
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
J
1.3
40
W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1311
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V
Collector Cutoff Current VCB= 100V; IE= 0 10 μA
Emitter Cutoff Current VEB= 7V; IC= 0 10 μA
DC Current Gain IC= 0.5A; VCE= 5V 40 200
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 20 MHz
isc Website：www.iscsemi.cn
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