Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1297
DESCRIPTION
·With TO-3PN package
·High DC current gain
·Low saturation voltage
APPLICATIONS
·For audio frequency power amplifier
and low speed high current switching
industrial use
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 25 A
ICM Collector current-peak 50 A
IB Base current 1.5 A
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 8 V
℃)
T
=25℃ 100
C
PT Total power dissipation
=25℃ 3.0
T
a
T
Junction temperature 150 ℃
j
T
Storage temperature -55~150 ℃
stg
W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1297
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
ton
t
stg
Collector-emitter breakdown voltage IC=30mA ;IB=0 100 V
Collector-emitter saturation voltage IC=15A ;IB=30mA 1.5 V
Base-emitter saturation voltage IC=15A ;IB=30mA 2.2 V
Collector cut-off current VCB=100V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 5 mA
DC current gain IC=15A ; VCE=2V 1000 30000
DC current gain IC=25A ; VCE=2V 250
Turn-on time 1.0
I
=15A; IB1=-IB2=30mA
Storage time 5.0
C
V
CC
≈60V;R
=4Ω
L
μA
μs
μs
tf
h
Fall time
Classifications
FE-1
M L K J
1000-3000 2000-5000 4000-10000 8000-30000
2
2.0
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1297
PACKAGE OUTLINE
3
Fig.2 outline dimensions
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