Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1291
DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·For color TV horizontal deflection
output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
EBO
IC Collector current (DC) 3 A
ICM Collector current (Pulse) 13 A
PC Collector power dissipation TC=25℃ 65 W
Collector-base voltage Open emitter 1500 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 130 ℃
T
Storage temperature -55~130 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1291
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE
ts Storage time 4 8
tf Fall time
VF Diode forward voltage IF=-4A,IB=0 2.2 V
Emitter-base breakdown voltage IE=500mA; IC=0 5 V
Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V
Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V
VCB=750V; IE=0 50
Collector cut-off current
V
=1500V; IE=0
CB
DC current gain IC=2.5A ; VCE=10V 4 12
I
=2.5A
C
=0.8A,LB=5μH
I
Leak
1 mA
1
μA
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1291
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
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