Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1279
DESCRIPTION
·With TO-3 package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal deflection output
applications
·Switching regulator applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 5 A
Collector-base voltage Open emitter 1400 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
50 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1279
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=2A ; VCE=5V 8 22
fT Transition frequency IC=0.1A ; VCE=10V 3 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF
tf Fall time
Collector-emitter sustaining voltage IC=100mA ;IB=0 600 V
Collector-emitter saturation voltage IC=8A; IB=2A 5.0 V
Base-emitter saturation voltage IC=8A; IB=2A 1.6 V
Collector cut-off current VCB=500V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 1.0 mA
I
CP
=7A ;I
B1(
end
=1.5A
)
1.0
μA
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1279
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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