Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1275 2SD1275A
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB949/949A
·High DC current gain
·High-speed switching
APPLICATIONS
·For power amplification
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25
Base
Fig.1 simplified outline (TO-220Fa) and symbol
℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SD1275 60
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICM Collector current-Peak 4 A
PC Collector power dissipation
Tj
T
stg
Collector-base voltage
2SD1275A
Collector-emitter
voltage
Emitter-base voltage Open collector 5 V
Junction temperature 150
Storage temperature -55~150
2SD1275 60
2SD1275A
Open emitter
Open base
TC=25℃
Ta=25℃
80
80
35
2
V
V
W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1275 2SD1275A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
VBE Base-emitter voltage VCE=4V; IC=2A 2.8 V
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=2A; IB=8mA 2.5 V
Collector
cut-off current
Collector
cut-off current
Emitter cut-off current VEB=5V; IC=0 2.0 mA
DC current gain IC=1A ; VCE=4V 1000
DC current gain IC=2A ; VCE=4V 2000 10000
2SD1275 60
=30mA , IB=0
I
C
2SD1275A
2SD1275 VCB=60V; IE=0
2SD1275A VCB=80V; IE=0
2SD1275 VCE=30V; IB=0
2SD1275A VCE=40V; IB=0
80
1.0 mA
2.0 mA
V
fT Transition frequency IC=0.5A; VCE=10V;f=1MHz 20 MHz
Switching times
ton
ts
tf
h
Turn-on time 0.5
Storage time 4.0
Fall time
Classifications
FE-2
IC=2A ;IB1=8mA
=-8mA;VCC=50V
I
B2
1.0
Q R
2000-5000 4000-10000
μs
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1275 2SD1275A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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