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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1265 2SD1265A
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·For audio frequency power applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SD1265 60
V
Collector-base voltage
CBO
2SD1265A
2SD1265 60
V
Collector-emitter voltage
CEO
2SD1265A
V
Emitter-base voltage Open collector 8 V
EBO
IC Collector current (DC) 4 A
ICM Collector current-peak 6 A
Open emitter
Open base
V
80
V
80
IB Base current 1 A
TC=25℃ 30
PC Collector power dissipation
Ta=25℃
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
2
W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1265 2SD1265A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
Collector-emitter
sustaining voltage
2SD1265A
IC=0.2A , L=25mH
V
80
Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V
VBE Base-emitter on voltage IC=1A ; VCE=3V 1.2 V
2SD1265 60
I
Collector cut-off current VCB=20V; IE=0 30
CBO
I
Emitter cut-off current VEB=8V; IC=0 1 mA
EBO
h
DC current gain IC=0.1A ; VCE=3V 40
FE-1
h
DC current gain IC=1A ; VCE=3V 30 160
FE-2
μA
h
Classifications
FE-2
Q P O
30-60 500-100 80-160
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Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1265 2SD1265A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
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