Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1264 2SD1264A
DESCRIPTION ·
·With TO-220Fa package
·Complement to type 2SB940/940A
·High collector to emitter voltage V
·Large collector power dissipation P
APPLICATIONS
·For power amplification
·For TV vertical deflection output applications
PINNING
PIN DESCRIPTION
CEO
C
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICM Collector current-peak 3 A
PC Collector power dissipation
Collector-base voltage Open emitter 200 V
2SD1264 150
Collector-emitter voltage
2SD1264A
Emitter-base voltage Open collector 6 V
Open base
180
Ta=25℃ 2
=25℃ 30
T
C
V
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1264 2SD1264A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SD1264 150
V
V
V
V
CEO
CBO
EBO
CEsat
V
BE
Collector-emitter voltage
2SD1264A
Collector-base voltage
Emitter-base voltage
IC=5mA ,IB=0
I
=50μA ,IE=0
C
I
=500μA ,IC=0
C
V
180
200 V
6 V
Collector-emitter saturation voltage IC=0.5A, IB=50mA 1.0 V
Base-emitter voltage IC=0.4A ; VCE=10V 1.0 V
I
Emitter cut-off current VEB=4V; IC=0 50
EBO
I
Collector cut-off current VCB=200V; IE=0 50
CBO
h
DC current gain IC=0.15A ; VCE=10V 60 240
FE-1
h
DC current gain IC=0.4A ; VCE=10V 50
FE-2
μA
μA
fT Transition frequency IC=0.5A; VCE=10V,f=10MHz 20 MHz
h
Classifications
FE-1
Q P
60-140 100-240
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1264 2SD1264A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1264 2SD1264A
4
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