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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1263 2SD1263A
DESCRIPTION ·
·With TO-220Fa package
·High breakdown voltalge
APPLICATIONS
·For power amplification
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.75 A
ICM Collector current-peak 1.5 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
℃)
2SD1263 350
Open emitter
2SD1263A
2SD1263 250
Open base
2SD1263A
400
300
V
V
Ta=25℃ 2
PC Collector power dissipation
=25℃ 35
T
C
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1263 2SD1263A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
h
h
CEO
CEsat
V
I
EBO
I
CEO
I
CES
FE-1
FE-2
BE
Collector-emitter
voltage
Collector-emitter saturation voltage IC=1A, IB=0.2A 1.0 V
Base-emitter voltage IC=1A ; VCE=10V 1.5 V
Emitter cut-off current VEB=5V; IC=0 1.0 mA
Collector
cut-off current
Collector
cut-off current
DC current gain IC=0.3A ; VCE=10V 70 250
DC current gain IC=1A ; VCE=10V 10
2SD1263 250
2SD1263A
=30mA ,IB=0
I
C
300
V
2SD1263 VCE=150V; IB=0 1.0 mA
2SD1263A V
=200V; IB=0 1.0 mA
CE
2SD1263 VCE=350V; VBE=0 1.0 mA
2SD1263A V
=400V; VBE=0 1.0 mA
CE
fT Transition frequency IC=0.5A; VCE=5V,f=10MHz 30 MHz
Switching times
ton Turn-on time 0.5 μs
I
=1A;IB1=-IB2=0.1A
ts Storage time 2 μs
tf Fall time
V
C
CC
=50V
0.5 μs
h
Classifications
FE-1
Q P
70-150 120-250
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1263 2SD1263A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1263 2SD1263A
4
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